TIM5964-60SL TOSHIBA

TIM5964-60SL TOSHIBA

MICROWAVE POWER GaAs
TIM5964-60SL

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA




FEATURES

*LOW INTERMODULATION DISTORTION „
  IM3=-45 dBc at Pout= 36.5dBm G1dB=8.5dB at 5.9GHz to 6.4GHz Single Carrier Level
*HIGH POWER
  P1dB=48.0dBm at 5.9GHz to 6.4GHz
*HIGH GAIN
  G1dB=8.5dB at 5.9GHz to 6.4GHz
*BROAD BAND INTERNALLY MATCHED FET „
*HERMETICALLY SEALED

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